Our Technology

NanoGetters® Technology

Patented proprietary NanoGetters® technology does not require a high temperature metal oxide/metal reduction reaction step to activate the getter like older getter technologies. The gettering materials are deposited under high vacuum, so they are not oxidized in the act of forming the NanoGetters® or in the process of storing or transporting the material.

Once in use the temperature can be increased to enhance the gettering process. The reactive metal surface reacts with the gas atoms, locking them into the getter. These trapped atoms may diffuse into the getter, thereby renewing the metal surface, ready to adsorb more gas atoms.

Particles are a big problem with traditional Non Evaporable Getters (NEG) made using sintered, powder metallurgy techniques. Metal particles generated by the old style getters can lead to electrical shorts, friction wear, and other defects or problems. Since NanoGetters® are thin film based, and are not manufactured using powder metallurgy, the cleanliness of NanoGetters® is far superior to NEGs. No random metal particles are produced by handling, activating or cutting NanoGetters®.

NanoGetter® Intellectual Property

• NanoGetters® has the first granted patent on using thin film getters with wafer bonded MEMS devices
• Methods for prevention, reduction and elimination of outgassing and trapped gases in micromachined devices, US Patent 6,499,354, 2002, originally filed on May 4, 1998.
• Micromachined Fluidic Apparatus, thin film getter claim, US Patent 6,477,901, 2002.
• Method of forming a reactive material and article formed thereby, US Patent 6,923,625, 2005
• Getter Device, US Patent 7,789,949, 2010
• Pending patents

Conventional sintered particle NEG surface

NanoGetter® surface

SEM View of s NanoGetter Film